pulse半导体（雷达测速仪的应用原理是什么）

本文目录

• 雷达测速仪的应用原理是什么
• 有关电子方面的知识及英语术语
• 9v2a的充电器、5v2.5a和5v2a的这三个充电器类别的区别
• 什么是电频器
• 直流无刷电机的工作原理
• 功率半导体英文翻译
• LED灯的发光原理是什么
• 怎样用英语翻译“二极管”
• 电动车电机线怎么直接电源

雷达测速仪的应用原理是什么

雷达工作原理与声波之反射情形极类似，差别只在于其所使用之波为一频率极高之无线电波，而非声波。雷达之发射机相当于喊叫声之声带，发出类似喊叫声之电脉冲(Pulse)，雷达之指向天线犹如喊话筒，使电脉冲之能量，能集中某一方向发射。接收机之作用则与人耳相仿，用以接收雷达发射机所发出电脉冲之回波。 测速雷达主要系利用都卜勒效应(DopplerEffect)原理：当目标向雷达天线靠近时，反射信号频率将高于发射机频率;反之，当目标远离天线而去时，反射信号频率将低于发射机率。如此即可借由频率的改变数值，计算出目标与雷达的相对速度。 测速雷射种类于固态雷射中的半导体雷射。雷射测速设备采用红外线半导体雷射二极管。雷射二极管有几个特点使它极适合用来量测速度： 1. 雷射二极管自微小范围中发射出极窄的光束，此一狭窄光束才能精确地瞄准目标。 2. 雷射二极管以小于十亿分之一秒的瞬间切换开关，大大提高精确度。 3. 雷射二极管发射率很窄，其侦测器极易接收到精确的波长;因此在日间有强烈阳光时，仍能正常操作。 4. 雷射二极管只发射电磁光谱中的红外线部分;而红外线系眼睛看不见的，不会影响驾驶人的注意力。

有关电子方面的知识及英语术语

电子学 英文2007-11-01 上午 09:28AC(alternating current) 交流(电)A／D(****og to digital) 模拟／数字转换ADC(****og to digital convertor) 模拟／数字转换器ADM(adaptive delta modulation) 自适应增量调制ADPCM(adaptive differential pulse code modulation) 自适应差分脉冲编码调制ALU(arithmetic logic unit) 算术逻辑单元ASCII(American standard code for information interchange) 美国信息交换标准码**(audio visual) 声视，视听**D(binary coded decimal) 二进制编码的十进制数**R(bi-directional controlled rectifier)双向晶闸管 **R(buffer courtier reset) 缓冲计数器BZ(buzzer) 蜂鸣器，蜂音器C(capacitance，capacitor) 电容量，电容器CATV(cable television) 电缆电视CCD(charge-coupled device) 电荷耦合器件CCTV(closed-circuit television) 闭路电视CMOS(complementary) 互补MOSCPU(central processing unit)中央处理单元CS(control signal) 控制信号D(diode) 二极管DAST(direct ****og store technology) 直接模拟存储技术DC(direct current) 直流DIP(dual in-line package) 双列直插封装 字串7DP(dial pulse) 拨号脉冲DRAM(dynamic random access memory) 动态随机存储器DTL(diode-transistor logic) 二极管晶体管逻辑DUT(device under test) 被测器件DVM(digital voltmeter) 数字电压表ECG(electrocardiograph) 心电图ECL(emitter coupled logic) 射极耦合逻辑EDI(electronic data interchange) 电子数据交换EIA(Electronic Industries Association) 电子工业联合会EOC(end of conversion) 转换结束EPROM(erasable programmable read only memory) 可擦可编程只读存储器EEPROM(electrically EPROM) 电可擦可编程只读存储器ESD(electro-static discharge) 静电放电 FET(field-effect transistor) 场效应晶体管FS(full scale) 满量程F／V(frequency to voltage convertor) 频率／电压转换FM(frequency modulation) 调频FSK(frequency shift keying) 频移键控FSM(field strength meter) 场强计FST(fast switching shyster) 快速晶闸管FT(fixed time) 固定时间FU(fuse unit) 保险丝装置FWD(forward) 正向的GAL(generic array logic) 通用阵列逻辑GND(ground) 接地，地线GTO(Sate turn off thruster) 门极可关断晶体管 字串2 HART(highway addressable remote transducer) 可寻址远程传感器数据公路HCMOS(high density COMS) 高密度互补金属氧化物半导体(器件)HF(high frequency) 高频HTL(high threshold logic) 高阈值逻辑电路HTS(heat temperature sensor) 热温度传感器IC(integrated circuit) 集成电路ID(international data) 国际数据IGBT(insulated gate bipolar transistor) 绝缘栅双极型晶体管IGFET(insulated gate field effect transistor) 绝缘栅场效应晶体管I／O(input／output) 输入／输出I／V(current to voltage convertor) 电流-电压变换器IPM(incidental phase modulation) 附带的相位调制IPM(intelligent power module) 智能功率模块IR(infrared radiation) 红外辐射IRQ(interrupt request) 中断请求JFET(junction field effect transistor) 结型场效应晶体管LAS(light activated switch)光敏开关LASCS(light activated silicon controlled switch) 光控可控硅开关LCD(liquid crystal display) 液晶显示器LDR(light dependent resistor) 光敏电阻LED(light emitting diode) 发光二极管LRC(longitudinal redundancy check) 纵向冗余(码)校验 字串2LSB(least significant bit) 最低有效位LSI(1arge scale integration) 大规模集成电路M(motor) 电动机MCT(MOS controlled gyrator) 场控晶闸管MIC(microphone) 话筒，微音器，麦克风min(minute) 分MOS(metal oxide semiconductor)金属氧化物半导体MOSFET(metal oxide semiconductor FET) 金属氧化物半导体场效应晶体管N(negative) 负NMOS(N-channel metal oxide semiconductor FET) N沟道MOSFETNTC(negative temperature coefficient) 负温度系数OC(over current) 过电流OCB(overload circuit breaker) 过载断路器OCS(optical communication system) 光通讯系统OR(type of logic circuit) 或逻辑电路OV(over voltage) 过电压P(pressure) 压力FAM(pulse amplitude modulation) 脉冲幅度调制PC(pulse code) 脉冲码PCM(pulse code modulation) 脉冲编码调制PDM(pulse duration modulation) 脉冲宽度调制PF(power factor) 功率因数PFM(pulse frequency modulation) 脉冲频率调制PG(pulse generator) 脉冲发生器PGM(programmable) 编程信号PI(proportional-integral(controller)) 比例积分(***) 字串9PID(proportional-integral-differential(controller))比例积分微分(***)PIN(positive intrinsic-negative) 光电二极管PIO(parallel input output) 并行输入输出PLD(phase-locked detector) 同相检波PLD(phase-locked discriminator) 锁相解调器PLL(phase-locked loop) 锁相环路PMOS(P-channel metal oxide semiconductor FET) P沟道MOSFETP-P(peak-to-peak) 峰--峰PPM(pulse phase modulation) 脉冲相位洲制PRD(piezoelectric radiation detector) 热电辐射控测器PROM(programmable read only memory) 可编只读程存储器PRT(platinum resistance thermometer) 铂电阻温度计PRT(pulse recurrent time) 脉冲周期时间PUT(programmable unijunction transistor) 可编程单结晶体管PWM(pulse width modulation) 脉宽调制R(resistance，resistor) 电阻，电阻器RAM(random access memory) 随机存储器RCT(reverse conducting thyristor) 逆导晶闸管REF(reference) 参考，基准REV(reverse) 反转R/F(radio frequency) 射频RGB(red／green／blue) 红绿蓝ROM(read only memory) 只读存储器RP(resistance potentiometer) 电位器 字串3 RST(reset) 复位信号RT(resistor with inherent variability dependent) 热敏电阻RTD(resistance temperature detector) 电阻温度传感器RTL(resistor transistor logic) 电阻晶体管逻辑(电路)RV(resistor with inherent variability dependent on the voltage) 压敏电阻器SA(switching assembly) 开关组件SBS(silicon bi-directional switch) 硅双向开关，双向硅开关SCR(silicon controlled rectifier) 可控硅整流器SCS(safety control switch) 安全控制开关SCS(silicon controlled switch) 可控硅开关SCS(speed control system) 速度控制系统SCS(supply control system) 电源控制系统**(spark gap) 放电器SIT(static induction transformer) 静电感应晶体管SITH(static induction thyristor) 静电感应晶闸管SP(shift pulse) 移位脉冲SPI(serial peripheral inte***ce) 串行外围接口SR(sample realy，saturable reactor) 取样继电器，饱和电抗器SR(silicon rectifier) 硅整流器SRAM(static random access memory) 静态随机存储器SSR(solid-state relay) 固体继电器SSR(switching select repeater) 中断器开关选择器 字串8SSS(silicon symmetrical switch) 硅对称开关，双向可控硅SSW(synchro-switch) 同步开关ST(start) 启动ST(starter) 启动器STB(strobe) 闸门，选通脉冲T(transistor) 晶体管，晶闸管TACH(tachometer) 转速计，转速表TP(temperature probe) 温度传感器TRIAC(triodes AC switch) 三极管交流开关TTL(transistor-transistor logic) 晶体管一晶体管逻辑TV(television) 电视UART(universal asynchronous receiver tran**itter) 通用异步收发器VCO(voltage controlled oscillator) 压控振荡器VD(video decoders) 视频译码器VDR(voltage dependent resistor) 压敏电阻VF(video frequency) 视频V／F(voltage-to-frequency) 电压／频率转换V／I(voltage to current convertor) 电压-电流变换器VM(voltmeter) 电压表VS(vacuum switch) 电子开关VT(visual telephone) 电视电话VT(video terminal) 视频终端

9v2a的充电器、5v2.5a和5v2a的这三个充电器类别的区别

区别：只是输出的电流不一样。9V2A的充电快，前提是你的手机支持快充，9V2A就是18W的充电速度，5V2.5A与5V2A分别是12.5W与10W的充电，9V2A的充电速度比5C2.5A的充电时间要减少约30%的时间。充电器（Charger）是一种为其他电器进行充电的设备，采用高频电源技术，运用先进的智能动态调整充电技术。利用电力电子半导体器件，把电压和频率固定不变的交流电变换为直流电。原装充电器（指线充）上所标注的输出参数：比如输出4。4V/1A、输出5.9V/400mA……就是指内部稳压电源的相关参数。明白了这个道理，你很会知道一个（品质好的）手机充电器很容易改成一个质量优良的稳压电源！比如输出4.4V可以给4.5V的设备用，5.9V的可以给6V的设备用。充电机通过微机控制技术，实现优化的Wsa+Pulse充电特性曲线，充电电流随蓄电池的充电电压的升高而自动下降；结合充电末期的脉冲充电方式，使充电效果更为理想。采用容量平衡原理智能地判别蓄电池的充足，保证蓄电池充足——即不欠充、也不过充，充电同时具有充电参数动态跟踪调整功能以及完善的保护功能。

什么是电频器

三.知识入门变频器是利用电力半导体器件的通断作用将工频电源变换为另一频率的电能控制装置。PWM是英文Pulse Width Modulation(脉冲宽度调制)缩写，按一定规律改变脉冲列的脉冲宽度，以调节输出量和波形的一种调值方式。PAM是英文Pulse Amplitude Modulation(脉冲幅度调制)缩写，是按一定规律改变脉冲列的脉冲幅度，以调节输出量值和波形的一种调制方式。变频器的主电路大体上可分为两类:电压型是将电压源的直流变换为交流的变频器，直流回路的滤波是电容;电流型是将电流源的直流变换为交流的变频器，其直流回路滤波石电感。异步电动机的转矩是电机的磁通与转子内流过电流之间相互作用而产生的，在额定频率下，如果电压一定而只降低频率，那么磁通就过大，磁回路饱和，严重时将烧毁电机。因此，频率与电压要成比例地改变，即改变频率的同时控制变频器输出电压，使电动机的磁通保持一定，避免弱磁和磁饱和现象的产生。这种控制方式多用于风机、泵类节能型变频器。频率下降(低速)时,如果输出相同的功率,则电流增加,但在转矩一定的条件下,电流几乎不变。采用变频器运转，随着电机的加速相应提高频率和电压，起动电流被***在150%额定电流以下(根据机种不同，为125%~200%)。用工频电源直接起动时，起动电流为6~7倍，因此，将产生机械电气上的冲击。采用变频器传动可以平滑地起动(起动时间变长)。起动电流为额定电流的1.2~1.5倍，起动转矩为70%~120%额定转矩；对于带有转矩自动增强功能的变频器，起动转矩为100%以上，可以带全负载起动。频率下降时电压V也成比例下降，这个问题已在回答4说明。V与f的比例关系是考虑了电机特性而预先决定的，通常在***的存储装置(ROM)中存有几种特性，可以用开关或标度盘进行选择。频率下降时完全成比例地降低电压，那么由于交流阻抗变小而直流电阻不变，将造成在低速下产生地转矩有减小的倾向。因此，在低频时给定V/f,要使输出电压提高一些,以便获得一定地起动转矩,这种补偿称增强起动。可以采用各种方法实现,有自动进行的方法、选择V/f模式或调整电位器等方法在6Hz以下仍可输出功率，但根据电机温升和起动转矩的大小等条件，最低使用频率取6Hz左右，此时电动机可输出额定转矩而不会引起严重的发热问题。变频器实际输出频率(起动频率)根据机种为0.5~3Hz.通常情况下时不可以的。在60Hz以上(也有50Hz以上的模式)电压不变，大体为恒功率特性，在高速下要求相同转矩时，必须注意电机与变频器容量的选择给所使用的电机装置设速度检出器(PG)，将实际转速反馈给控制装置进行控制的，称为“闭环”，不用PG运转的就叫作“开环”。通用变频器多为开环方式，也有的机种利用选件可进行PG反馈。开环时，变频器即使输出给定频率，电机在带负载运行时，电机的转速在额定转差率的范围内(1%~5%)变动。对于要求调速精度比较高，即使负载变动也要求在近于给定速度下运转的场合，可采用具有PG反馈功能的变频器(选用件)。具有PG反馈功能的变频器，精度有提高。

直流无刷电机的工作原理

无刷直流电机由电动机主体和驱动器组成，是一种典型的机电一体化产品。 电动机的定子绕组多做成三相对称星形接法，同三相异步电动机十分相似。电动机的转子上粘有已充磁的永磁体 ，为了检测电动机转子的极性，在电动机内装有位置传感器。驱动器由功率电子器件和集成电路等构成，其功能是：接受电动机的启动、停止、制动信号，以控制电动机的启动、停止和制动；接受位置传感器信号和正反转信号，用来控制逆变桥各功率管的通断，产生连续转矩；接受速度指令和速度反馈信号，用来控制和调整转速；提供保护和显示等等。直流电机具有响应快速、较大的起动转矩、从零转速至额定转速具备可提供额定转矩的性能，但直流电机的优点也正是它的缺点，因为直流电机要产生额定负载下恒定转矩的性能，则电枢磁场与转子磁场须恒维持90°，这就要藉由碳刷及整流子。碳刷及整流子在电机转动时会产生火花、碳粉因此除了会造成组件损坏之外，使用场合也受到限制。交流电机没有碳刷及整流子，免维护、坚固、应用广，但特性上若要达到相当于直流电机的性能须用复杂控制技术才能达到。现今半导体发展迅速功率组件切换频率加快许多，提升驱动电机的性能。微处理机速度亦越来越快，可实现将交流电机控制置于一旋转的两轴直角坐标系统中，适当控制交流电机在两轴电流分量，达到类似直流电机控制并有与直流电机相当的性能。此外已有很多微处理机将控制电机必需的功能做在芯片中，而且体积越来越小；像模拟/数字转换器(****og-to-digital converter，adc)、脉冲宽度调制(pulse wide modulator，pwm)…等。直流无刷电机即是以电子方式控制交流电机换相，得到类似直流电机特性又没有直流电机机构上缺失的一种应用。

功率半导体英文翻译

In addition to improvements in chip performance, the shell packaging technology is also a great breakthrough, IR inversion in the development of field-effect transistor, also known as "FlipFET" on the basis of this year introduced the DirectFET, as shown in Figure 6. Its source and gate inversion result can be directly welded in the printed circuit board, the drain at the top of the weld metal in its shell, if necessary, by the radiator or direct contact with the equipment enclosure. DirectFET size equivalent to the traditional SO-8 plastic (plastic with an area of about 4x5 mm2) shell. In such a **all device, the first structure of a double-sided cooling. It is a lead frame, no-lead solder joints of the device, it brought about a series of advantages: it’s non-resistor chip package (DFPR) is only 0. 1mW, device thickness of only 0. 7mm, resistance and parasitic inductance have dropped significantly. Such characteristics make it especially suitable for the above-mentioned computer of the latest generation of CPU. In the multi-phase circuits, each with only two of 30 security DirectFET can transfer current. Increase its current rate of 400 per delicate security, the working frequency of 1-2 MHz. Secondly, you must be focused on power semiconductor devices in the IC direction: as a result of the development of MOSFET and IGBT, and their matching to provide a trigger signal power integrated circuit PIC (Power IC) have also developed rapidly. At that time, also known as MOS gate drive MGD (MOS Gate Driver) or control integrated circuit CIC (Control IC). With the expansion of the scope of application: such as motor drives, lighting, various power supply and so on, CIC of the cultivars have been rapidly increasing. These CIC in the development process And gradually from a ****** function to trigger the special needs of a wide range of applicati*** development. PIC is the earliest that can be used in high voltage IC, therefore, also known as high-voltage IC (HVIC). However, many applicati*** such as communicati***, computers, portable power supply and so on, they do not require high voltage, but demand for the special needs of the development of application specific integrated circuit. Because of their combination and application of power semiconductor devices, we have the power to include them in a class of semiconductor devices. So now the power semiconductor devices in the family, there are many integrated circuits. Many of these power devices with integrated circuits inside, some outside while the separation of power devices. Judging from this point, the limits of power and microelectronics has become increasingly blurred. If a large number of computer applicati*** in power modulation device voltage LDO (Low Drop Out) is one example. It does not belong to switch applicati***. As a result of a large number of integrated circuits into the power semiconductor devices, which c***ider the power semiconductor integrated circuits and devices to do the same in the chip or device on the development of the natural line of thought. Done in the same chip, the original is the concept of power integrated circuits, but their power often relatively **all. Done in the same package, easy to increase power capacity, a number of passive components is also possible to join, here often called multi-chip module (MCM). IR last year iPOWIR developed is a typical multi-chip module. It will power devices to control the use of integrated circuits, or in combination with pulse-width modulation (PWM) integrated circuit, according to the needs of power supply design, using BGA packaging technology portfolio in the same device (as shown in Figure 7) . Multi-chip device that greatly simplifies the power supply design staff. Components reduces the number and percentage of the area, there has been a lot of performance improvement. iPOWIR development is c***idered DC-DC conversion of the future. But, in fact, a wide range of applicati*** in other fields, as long as the requirements of further integration, MCM structure and will there will be more and more. Therefore, it is the power semiconductor devices important direction of development. In the above presentation, the development of MOSFET has been referred to as 4C industry provides an important foundation. 4C industries which, at present it is the most active direction of the product. We can understand: in the communicati***, computer, c***umer electronics and automotive development, will require many, many close contacts and IC of all types of power semiconductor devices. Each of these aspects can be used to introduce a lot of space. Not detailed here. Add: Conclusion To sum up, the power semiconductor devices the past few years, c***tantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a ****** process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.Conclusion To sum up, the power semiconductor devices the past few years, c***tantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a ****** process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.

LED灯的发光原理是什么

LED发光原理就是利用的发光二极管。led灯发光原理：LED里面的PN结，在电压驱动作用下，内部的电子和空*会复合，复合的过程能量会以发光的形式释放，这就是LED灯的工作原理。LED发光原理就是利用的发光二极管，而且现在有各式各样的LED灯以及各种颜色的LED灯，LED灯是一种非常节省能源的灯泡。不同材料打造的LED灯就可以发出不同的颜色，比如有红色的，蓝色的等等。发光二极管的核心部分是由p型半导体和n型半导体组成的晶片，在p型半导体和n型半导体之间有一个过渡层，称为p-n结，通常采用双异质结和量子阱结构。

怎样用英语翻译“二极管”

dioden〈电〉二级管diode二极管;〔二极体〕A device utilized to permit current flow in one direction in a circuit, and to inhibit current flow in the other direction. In computers, these diodes are primarily germanium or silicon crystals.电路中允许电流在一个方向流过而禁止在另一个方向流过的电子器件。在计算机中,这些二极管基本上是锗或硅晶体二极管。dioden.【电子】二极管abrupt junction diode突变结二极管absorber diode吸收二极管alkali ion diode碱离子二极管alloy junction diode合金结二极管alloyed diode合金(型)二极管antilog diode反对数二极管back-to-back diode背对背二极管backward diode反向二极管band switching diode波段转换开关二极管barrier injection transit-time diode势越二极管base-collector diode基极集电极二极管biased diode偏压二极管bilateral diode双向二极管bonded NR diode键合负阻二极管booster diode升压二极管bootstrap diode阴极负载二极管breakdown diode雪崩二极管, 击穿二极管bulk diode体效应二极管by-pass diode旁通二极管catching diode箝位二极管centering diode定心二极管channelling diode沟道(效应)二极管charge storage diode电荷存储二极管charging diode充电二极管clamping diode钳位二极管clipper diode削峰二极管cold-cathode gas diode冷阴极充气二极管collector-base diode集电极-基极二极管commutation diode整流二极管, 换向二极管compound diode复合二极管c***tant voltage diode稳压二极管crystal diode晶体二极管damper diode阻尼二极管damping diode阻尼二极管delayed diode阻尼二极管demodulator diode二极管解调器detector diode检波器二极管dielectric diode电介质二极管difference diode差分二极管diffused type diode扩散型二极管diffused-junction varactor diode扩散结变容二极管discharge diode放电二极管double base diode双基极二极管, 单结晶体管double drift region avalanche diode双漂移雪崩二极管double heatsink diode双重散热片二极管dummy diode仿真二极管duo diode双二极管duplex diode双二极管efficiency diode效率二极管(高压整流用) 阻尼二极管emission limited diode限幅发射二极管energy recovery diode能量恢复二极管, 升压二极管epitaxial p-n junction diode外延 p-n 结二极管equivalent diode等效二极管field-effect diode场效应二极管fixed-pattern generator using a Au-Si diode金-硅二极管固定模式信号发生器fluid diode射流二极管four-layer diode四层二极管fuse diode熔式二极管gas diode充气二极管gas -filled diode充气二极管gate diode门二极管gate-controlled diode闸控二极管germanium diode锗二极管glass diode玻璃二极管gold bond type diode金键二极管gold-epitaxial silicon high-frequency diode金-外延硅高频二极管grid-cathode diode栅-阴二极管heavy-duty diode大功率二极管heterojunction diode异质结二极管high-frequency diode高频二极管high-pressure gas-filled diode高压充气二极管high-voltage diode耐高压二极管hold-off diode闭锁二极管hot carrier diode热载流子二极管hot-cathode gas filled diode热阴极充气二极管hypercap diode变容二极管idealized diode理想二极管impact avalanch transit time diode碰撞雪崩渡越时间二极管inductance diode电感二极管infrared detection diode红外探测二极管infrared-emitting diode红外发射二极管injection diode注入二极管injection luminescent diode注入式发光二极管intrinsic-barrier diode本征势垒二极管isolating diode隔离二极管junction diode面结型二极管Ketter diode变容二极管laser diode激光器二极管laser detector diode激光检波二极管level shift diode电平移动二极管light sensitive diode光敏二极管light-emitting diode发光二极管lighthouse diode灯塔式二极管(电子管)lighting diode发光二极管limited space-charge accumulation diode限累二极管limiter diode限幅二极管limiting-velocity diode限速二极管linear diode线性二极管locking diode锁定二极管, 自保持二极管log diode对数二极管logic diode逻辑二极管luminescence diode发光二极管luminescent diode发光二极管luminous diode发光二极管magneto diode磁敏二极管Matsu****a pressure diode压敏二极管, 松下压敏二极管measuring diode测量用二极管mesa diode台面二极管metal-semiconductor diode金属-半导体二极管microminiature diode超小型二极管microwave diode微波二极管minitype voltage regulator diode微型稳压二极管mixer diode混频器二极管mott-barrier diode莫特势垒二极管multiple diode复式二极管negative resistance diode负阻二极管noise diode噪声二极管octupler diode八倍频变容二极管opposed diode相对连接的二极管optical diode光二极管optoelectronic diodes光电子二极管osaki diode隧道二级管oscillating diode振荡二极管parametric diode参数二极管, 参量二极管photosensitive diode光敏二极管photosensor diode光传感二极管, 光敏感二极管pick-off diode截止二极管p-i-n diode正-本-负二极管pin-photo diode针形光电管, 细光束光电管planar diode平面(型)二极管plane-parallel diode平行板二极管pla**a diode等离子体二极管point-contact diode点接触型二极管press-fit diode压装二极管pressure-sensitive diode压敏二极管protecting diode保护二极管pulse damping diode脉冲阻尼二极管pulsed laser diode脉冲激光二极管Read diode里德二极管recovery diode恢复二极管reference diode参考二极管, 恒压二极管ring diode环形二极管saturated diode饱和二极管selenium diode硒二极管semiconductor diode半导体二极管series diode串联二极管series-efficiency diode升压二极管(行扫描输出级用)shunt diode旁路二极管silicon diode硅二极管silicon alloy diode硅合金二极管silicon junction diode硅结二极管silicon photoelectric diode硅光电二极管silicon punch through diode硅穿通二极管silicon reference diode硅稳压二极管silver-bond diode银键二极管snapback diode阶跃恢复二极管snap off diode急变二极管, 阶跃恢复二极管stacked laser diode堆垛激光二极管steering diode控向二极管step-recovery diode阶跃恢复二极管, 急变二极管storage diode存储二极管su***ce barrier diode表面阻挡层二极管, 表面势垒二极管switching diode开关二极管temperature limited diode温度限制二极管temperature-compensated Zener diode温度补偿齐纳二极管thermoelectric diode温差电二极管thin-film diode薄膜二极管three-contact diode三接点二极管three-layer diode三层二极管through diode穿通二级管transit-time microwave diode渡越时间微波二极管trigger diode触发二极管tunnel diode隧道二极管turbulent diode紊流二极管twin diode双二极管unilateral diode单向二极管valve action diode二极管的阀作用varactor diode变容二极管, 参量二极管variable capacitance diode变容二极管varicap diode变容二极管voltage regulator diode稳压二极管voltage variable brightness diode随电压变化亮度的二极管voltage variable capacitance diode压控变容二极管vortex diode涡流二极管Zener diode齐纳二极管, 稳压二极管dioden.二极管英汉电信大词典dioden.二极管英汉地质大词典dioden.二极管英汉纺织大词典dioden.二极管英汉广播大词典dioden.二极管英汉环境大词典dioden.二极管英汉航空大词典dioden.二极管n.二级管英汉化学大词典dioden.二极管英汉海运大词典diode二极管英汉进出口商品词汇大全diode二极管英汉计算机大词典dioden.二极管英汉机械大词典dioden.二极管新英汉石油技术词典diode二极管英汉能源大词典dioden.二极管英汉汽车大词典dioden.二极管英汉水利大词典dioden.二极管,电整流器英汉石油大词典dioden.二极管英汉消防词典diode二极管英汉冶金大词典dioden.二极管英汉医学大词典dioden.二级管英汉造纸大词典dioden.二极管物理学专业词典diode二极管信息学专业词典diode二极管

电动车电机线怎么直接电源

　　一般电机接线盒上有接线图，三相电机4kw一下的接成星型，4kw以上接三角形。　　电动车的***相对两轮电动车的***简单了很多，少了转向、刹车、防盗、转换器等诸多专用线，三轮车***的主要线路主电源线三根，其中红色电源正极，黑色电源负极，细红色是电门线。　　电机线（有刷）三根或两根，三根线的为红色、黑色、蓝色，其中红色电机正极，黑色电机负极，蓝色为辅助线，多数电机可以不接，三线有刷电机第三碳刷拄。手把线，细红色、黑色、绿色，其中红色为正5V电压先接手把红色线，细黑色为负极，接手把黑色线，绿色为控制信号线，接手把绿线。无刷电机***仅多了五根霍尔线，其中红、黑色为5V电源正负极，其他蓝、黄、绿为霍尔线。通用学习线为两根白色线，对接即处于学习状态，分开即为工作状态。